unisonic technologies co., ltd UTT60N05 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-662.a 60a, 50v n-channel enhancement mode power mosfet transistor ? description the utc UTT60N05 is an n-channel enhancement power mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) , high switching speed, high current capacity and low gate charge. the utc UTT60N05 is suitable for motor control, ac-dc or dc-dc converters and audio amplifiers, etc. ? features * r ds(on) =14m ? @ v gs =10v,i d =20a * high switching speed * high current capacity * low gate charge(typical 39nc) ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UTT60N05l-ta3-t UTT60N05g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
UTT60N05 preliminary power mosfe unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-662.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 50 v gate-source voltage v gss 20 v continuous i d 60 a drain current pulsed i dm 120 a single pulsed e as 600 mj avalanche energy repetitive e ar 150 mj power dissipation p d 125 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 1 c/w ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 50 v drain-source leakage current i dss v ds =50v, v gs =0v 1 a forward v gs =+20v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2 4 v static drain-source on-state resistance r ds(on) v gs =10v, i d =20a 14 18 m ? dynamic parameters input capacitance c iss 2000 pf output capacitance c oss 400 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 115 pf switching parameters total gate charge q g 39 60 nc gate to source charge q gs 12 nc gate to drain charge q gd v gs =10v, v ds =30v, i d =60a, i g =3.33ma 10 nc turn-on delay time t d(on) 12 30 ns rise time t r 11 30 ns turn-off delay time t d(off) 25 50 ns fall-time t f v dd =30v, i d =15a, r g =4.7 ? , v gs =10v 15 30 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 60 a maximum body-diode pulsed current i sm 120 a drain-source diode forward voltage v sd i s =60a, v gs =0v 1.6 v
UTT60N05 preliminary power mosfe unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-662.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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